Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
WS2 ribbon arrays with defined chirality and coherent
Xue et al. introduce a method for the epitaxial growth of tungsten disulfide nanoribbon arrays with predefined chirality and coherent polarity. The flexibility in fabricating deterministic-structured ribbon arrays enables the
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
The photovoltaic effect in traditional p–n junctions—where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)—involves the light-induced creation of electron–hole pairs and their subsequent separation, generating a current.This photovoltaic effect is particularly important for environmentally benign energy harvesting, and its efficiency
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
Key takeaway: ''Tungsten disulfide nanotubes with polar properties significantly enhance the bulk photovoltaic effect, resulting in higher efficiencies in solar energy conversion.'' Sign up DOI: 10.1038/s41586-019-1303-3
TMDs最新Nature:二硫化钨纳米管中的增强型光伏效应
年06月19日,相关成果以题为"Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes"的文章在线发表在Nature上。 【图文导读】 图1 TMD材料中的光伏响应. 图2 不同晶体对称性的二硫化钨器件中的光伏响应. 图3 二硫化钨纳米管中的光伏响应. 图4 多种材料的体光
X-MOL
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes Nature ( IF 50.5 Submission Guide > ) Pub Date: 2019-06-01, DOI: 10.1038/s41586-019-1303-3 Y J Zhang 1,2, T Ideue 3, M Onga 3, F Qin 3, R Suzuki 3, A Zak 4, R Tenne 5, J H Smet 2, Y Iwasa 3,6
Layer-Dependent Modulation of Tungsten Disulfide
Hydrogen Addition for Centimeter-Sized Monolayer Tungsten Disulfide Continuous Films by Ambient Pressure Chemical Vapor Deposition. Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Nature 2019, 570 (7761) Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS 2 thin film.
Enhanced photogalvanic effect in MoSSe monolayer with grain
Sunlight harvested by nanotubes," Nature. 570 Intrinsic structural defects in monolayer molybdenum disulfide," Nano Lett. 13 (6), Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes," Nature. 570 (7761), 349
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Zhang YJ 1 Here we report the discovery of the BPVE in devices based on tungsten disulfide, a member of the TMD family. We find that systematically reducing the crystal symmetry beyond mere
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
(DOI: 10.1038/S41586-019-1303-3) The photovoltaic effect in traditional p–n junctions—where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)—involves the light-induced creation of electron–hole pairs and their subsequent separation, generating a current. This photovoltaic effect is particularly important for
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Y. J. Zhang (), This photovoltaic effect is particularly important for environmentally benign energy harvesting, and its efficiency has been increased dramatically, almost reaching the theoretical limit1. Here we report the discovery of the BPVE in devices based on
Enhanced intrinsic photovoltaic effect in tungsten disulfide
The photovoltaic effect in traditional p–n junctions—where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)—involves the light
Effect of oblique incidence of the laser light on the photocurrent
The photovoltaic effect in traditional p–n junctions—where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)—involves the light-induced
A giant intrinsic photovoltaic effect in atomically thin ReS2.
The photovoltaic (PV) effect in non-centrosymmetric materials consisting of a single component under homogeneous illumination can exceed the fundamental Shockley-Queisser limit compared to the traditional p-n junctions. Two-dimensional (2D) materials with a reduced dimensionality and smaller bandgap were predicated to be better candidates for the
Toshiya Ideue ｜ Topological Materials Science
RESEARCH. I am studying the characteristic transport and optical properties in van der Waals nanostructures. By using the ionic liquid gating or exfoliation/transfer techniques, I will engineer the symmetry of van der Waals interfaces and search for the novel Physical properties and functionalities such as nonreciprocal transport and anomalous photovoltaic effect.
Prediction of photogalvanic effect enhancement in Janus
The significantly enhanced photocurrent in 1D WS 2 nanotubes compared to 2D planar WS 2 monolayers Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Nature (2019) Enhanced photogalvanic effect in the two-dimensional MgCl 2 /ZnBr 2 vertical heterojunction by inhomogenous tensile stress.
Biomedical applications of transition metal dichalcogenides
Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Nature (2019) L. Yadgarov et al. Strong light–matter interaction in tungsten disulfide nanotubes. Phys. Chem. Chem. Phys. (2018) A.J. Mannix et al. Synthesis and chemistry of elemental 2D materials. Nat. Rev. Chem. (2017)
Understanding the Photoluminescence Quenching of Liquid
Monolayer transition metal dichalcogenides (TMDs) are being investigated as active materials in optoelectronic devices due to their strong excitonic effects. While mechanical exfoliation (ME) of monolayer TMDs is limited to small areas, these materials can also be exfoliated from their parent layered materials via high-volume liquid phase exfoliation (LPE).
Special nanotubes could improve solar power and imaging
Special nanotubes could improve solar power special semiconductor material based on tungsten disulfide Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes, Nature (2019
Enhanced photogalvanic effect in the two-dimensional MgCl
The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of a dc photocurrent at zero bias with a high polarization sensitivity, which makes it very attractive in photodetection. However, the magnitude of the PGE photocurrent is usually small, leading to a low photoresponsivity, and therefore hampers its practical application in
Synthesis of Arrayed Tungsten Disulfide Nanotubes.
Tungsten disulfide nanotubes (WS2-NTs), with their cylindrical structure composed of rolled WS2 sheets, have attracted much interest because of their unique physical properties reflecting quasi-one-dimensional chiral structures. They exhibit a semiconducting electronic structure regardless of their chirality, and various semiconducting and optoelectronic device
Bulk photovoltaic effect and high mobility in the polar 2D
The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors
6 FAQs about [Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes]
Can tungsten disulfide enhance bpve?
Here we report the discovery of the BPVE in devices based on tungsten disulfide, a member of the TMD family. We find that systematically reducing the crystal symmetry beyond mere broken inversion symmetry—moving from a two-dimensional monolayer to a nanotube with polar properties—greatly enhances the BPVE.
Do polar nanotubes increase photovoltaic efficiency?
A bulk photovoltaic effect is observed in devices based on tungsten disulfide, and is enhanced if the devices take the form of polar nanotubes, showing the importance of reducing crystal symmetry to a polar structure in achieving higher efficiencies.
Can tungsten disulfide be shaped into nanotubes?
Zhang and colleagues’ work calls attention to a hitherto-unexplored approach: shaping the semiconductors that have high light absorption into nanotubes. In the case of tungsten disulfide, the crystal symmetry of the nanotube is reduced with respect to that of the monolayer and bilayer, because of the tube’s curved walls.
Can tungsten disulfide be used to make junction-free solar cells?
Zhang and colleagues fabricated junction-free solar cells using the semiconductor tungsten disulfide. Crystals of this material have a layered structure, and can be peeled off layer by layer in a similar way to graphite. The resulting atom-thick sheets can then be rolled by chemical methods into tubes that have diameters of about 100 nanometres.
What is the photovoltaic effect in a p-n junction?
7 RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan. The photovoltaic effect in traditional p-n junctions-where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)-involves the light-induced creation of electron-hole pairs and their subsequent separation, generating a current.
Is tungsten disulfide a two dimensional semiconductor?
You have full access to this article via your institution. Tungsten disulfide (WS 2) and other group-VI-B TMDs are two-dimensional semiconductors with relatively small bandgaps of 1.2–2.1 eV (refs 11, 12). In their most stable 2H phase, the unit cell of bulk TMDs is centrosymmetric and the material belongs to the D6h point group.
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